keywords: SILAR, Manganese Oxide, thin films, XRD.
Manganese oxide thin films were doped with10% Aluminum (Al) on glass substrates at deposition temperature of 55ᵒC using the successive ionic layer adsorption reaction (SILAR) method with NaOH as source of OH-. The films were annealed at 300°C using the master chef annealing machine and the times for the deposition were varied for 1hr, 1hr.15mins. 1hr.30mins, 1hr.45 mins and 2hrs. The crystallographic studies were done using X-ray diffractometer. All the films were found to be polycrystalline in nature. The optical characteristics of the thin film were studied using UV-1800 double beam spectrophotometer. The films show very high transmittance and low absorbance in the visible infrared region of the electromagnetic spectrum. The band gaps of the films were calculated from absorption coefficient results. From the spectral observations, these films may not be good material for use as solar cell collectors but may be very useful as solar cell collector cover, anti–reflection in smart windows, parasitic capacitance, and composite materials in electrical and electronic devices.